Session – Growth
InGaN and Micro LEDs

Programme

• 08:30 – 09:00 25 Min. 5 Min.

  • Invited Talk
  • IT 64

  Efficient red emission from high In content InGaN alloy: towards native RGB micro-displays

  • Dr. Amélie Dussaigne (Grenoble / FR)
• 09:00 – 09:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 242

  Self-limiting growth of highly symmetric InGaN quantum dots on uniform GaN pyramid array

  • Professor Yong-Hoon Cho (Korea Advanced Institute of Science and Technology (KAIST) / KR)

   Growth, Optical devices
• 09:15 – 09:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 243

  Enhanced indium incorporation in full InGaN MQWs on high indium content InGaN platelets

  • Wentao Cai (Nagoya University / JP)

   Growth, Optical devices
• 09:30 – 09:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 244

  In situ X-Ray scattering studies of the influence of plasma properties on epitaxial InN growth by plasma-enhanced atomic layer deposition

  • Dr. Jeffrey Woodward (U.S. Naval Research Laboratory / US)

   Characterization, Growth
• 09:45 – 10:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 245

  Sputtering epitaxial growth of III-Nitrides and its application to tunneling-based multicolor cascaded LEDs

  • Professor Hiroshi Fujioka (The University of Tokyo / JP)

   Growth, Optical devices