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IWN 2022
Programm
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Prof. Dr. Yoshio Honda
Nagoya University / JP
Nagoya University
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Datum
Vorsitz
10.10.2022
13:45
–
15:15
Session
AlGaN Relaxation and Applications
Salon Moskau
Weitere Beteiligungen
11.10.2022
09:45
–
10:00
12 Min.
3 Min.
Abstract Talk
AT 050
Annealing of Mg nanodot arrays on GaN for p-type ohmic contact
Electronic devices, Novel Materials and Nanostructures
11.10.2022
11:00
–
11:15
12 Min.
3 Min.
Abstract Talk
AT 075
Progress of morphology roughening of GaN drift layer on GaN substrates with slight off-angle grown by MOVPE
Electronic devices, Growth
11.10.2022
11:15
–
11:30
12 Min.
3 Min.
Abstract Talk
AT 076
Laser slicing process for thinning GaN substrate and GaN on GaN devices
Electronic devices, Growth
11.10.2022
16:15
–
16:30
12 Min.
3 Min.
Abstract Talk
AT 092
Decomposition and reaction analysis of triethylgallium for the effectivity of carbon incorporation in GaN MOVPE
Growth
11.10.2022
Poster Presentation
PP 272
Temperature field and fluid flow in ammonothermal growth of GaN during etch-back and crystal growth for a retrograde solubility configuration
Growth
12.10.2022
09:45
–
10:00
12 Min.
3 Min.
Abstract Talk
AT 110
Reverse leakage mechanism of 900 V-class GaN vertical p-n junction diodes with and without threading dislocations
Characterization, Electronic devices
12.10.2022
11:15
–
11:30
12 Min.
3 Min.
Abstract Talk
AT 135
Space charge profile and carrier transport property in dopant-free GaN-based p-n junction formed by distributed polarization doping
Characterization, Electronic devices
12.10.2022
14:45
–
15:00
12 Min.
3 Min.
Abstract Talk
AT 149
Highly effective activation of Mg–diffused p–type GaN using MgGaN
Characterization, Electronic devices
12.10.2022
17:00
–
17:15
12 Min.
3 Min.
Abstract Talk
AT 185
Analysis on mesa stripe related defects in UVC laser diode
Characterization, Optical devices
12.10.2022
17:30
–
17:45
12 Min.
3 Min.
Abstract Talk
AT 182
Fabrication of GaN/AlN resonant tunneling diodes by MOVPE
Characterization, Electronic devices
13.10.2022
09:45
–
10:00
12 Min.
3 Min.
Abstract Talk
AT 200
GaN IMPATT diode with pulsed watt-class microwave oscillation
Characterization, Electronic devices
14.10.2022
09:15
–
09:30
12 Min.
3 Min.
Abstract Talk
AT 243
Enhanced indium incorporation in full InGaN MQWs on high indium content InGaN platelets
Growth, Optical devices
14.10.2022
09:15
–
09:30
12 Min.
3 Min.
Abstract Talk
AT 231
Fabrication of BGaN neutron detectors and evaluation of the radiation detection characteristics
Growth, Novel Materials and Nanostructures
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