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Abstract Talk
AT 110

Reverse leakage mechanism of 900 V-class GaN vertical p-n junction diodes with and without threading dislocations

Termin

Datum: 12.10.2022

Zeit: 09:45 – 10:00

Redezeit: 12 Min.

Diskussionszeit: 3 Min.

Ort / Stream:

Room Berlin

Session

Characterization of Electronic Devices-2

Themen

Characterization
Electronic devices

Mitwirkende

Woong Kwon (Nagoya University / JP), Dr. Seiya Kawasaki (Nagoya University / JP), Professor Atsushi Tanaka (Institute of Materials and Systems for Sustainability / JP), Hirotaka Watanabe (Institute of Materials and Systems for Sustainability / JP), Prof. Dr. Yoshio Honda (Institute of Materials and Systems for Sustainability / JP), Hirotaka Ikeda (Mitsubishi Chemical Corporation / JP), Dr. Kenji Iso (Mitsubishi Chemical Corporation / JP; Institute of Materials and Systems for Sustainability / JP), Prof. Dr. Hiroshi Amano (Akasaki Research Center / JP)