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Dr. Kenji Iso

Mitsubishi Chemical / JP

Mitsubishi Chemical

Vortrag

12.10.2022
15:15 – 15:30 12 Min. 3 Min.
Abstract Talk
AT 169
Dual-layer semi-insulating GaN substrates doped with Mn, C, or Fe
Characterization, Growth

Weitere Beteiligungen

12.10.2022
09:45 – 10:00 12 Min. 3 Min.
Abstract Talk
AT 110
Reverse leakage mechanism of 900 V-class GaN vertical p-n junction diodes with and without threading dislocations
Characterization, Electronic devices
12.10.2022
10:30 – 10:45 12 Min. 3 Min.
Abstract Talk
AT 137
Electrical characterization of AlGaN/GaN HEMTs fabricated on semi-insulating GaN substrates doped with Fe, C, or Mn
Characterization, Electronic devices
12.10.2022
15:15 – 15:30 12 Min. 3 Min.
Abstract Talk
AT 169
Dual-layer semi-insulating GaN substrates doped with Mn, C, or Fe
Characterization, Growth