.css-1xsl8rf{width:100%;display:-webkit-box;display:-webkit-flex;display:-ms-flexbox;display:flex;-webkit-align-items:center;-webkit-box-align:center;-ms-flex-align:center;align-items:center;position:relative;overflow:hidden;background:var(--alert-bg);-webkit-padding-start:var(--chakra-space-4);padding-inline-start:var(--chakra-space-4);-webkit-padding-end:var(--chakra-space-4);padding-inline-end:var(--chakra-space-4);padding-top:var(--chakra-space-1);padding-bottom:var(--chakra-space-1);--alert-fg:var(--chakra-colors-orange-600);--alert-bg:var(--chakra-colors-orange-100);font-weight:var(--chakra-fontWeights-semibold);padding-left:var(--chakra-space-4);}.chakra-ui-dark .css-1xsl8rf:not([data-theme]),[data-theme=dark] .css-1xsl8rf:not([data-theme]),.css-1xsl8rf[data-theme=dark]{--alert-fg:var(--chakra-colors-orange-200);--alert-bg:rgba(251, 211, 141, 0.16);}@media screen and (min-width: 48em){.css-1xsl8rf{padding-left:var(--chakra-space-8);}}Bitte aktivieren Sie Javascript um alle Funktionen nutzen zu können und ihre Nutzererfahrung zu verbessern.

Dr. Seiya Kawasaki

Nagoya University / JP

Nagoya University

Vortrag

13.10.2022
09:45 – 10:00 12 Min. 3 Min.
Abstract Talk
AT 200
GaN IMPATT diode with pulsed watt-class microwave oscillation
Characterization, Electronic devices

Weitere Beteiligungen

11.10.2022
11:00 – 11:15 12 Min. 3 Min.
Abstract Talk
AT 075
Progress of morphology roughening of GaN drift layer on GaN substrates with slight off-angle grown by MOVPE
Electronic devices, Growth
12.10.2022
09:45 – 10:00 12 Min. 3 Min.
Abstract Talk
AT 110
Reverse leakage mechanism of 900 V-class GaN vertical p-n junction diodes with and without threading dislocations
Characterization, Electronic devices
12.10.2022
11:15 – 11:30 12 Min. 3 Min.
Abstract Talk
AT 135
Space charge profile and carrier transport property in dopant-free GaN-based p-n junction formed by distributed polarization doping
Characterization, Electronic devices
13.10.2022
09:45 – 10:00 12 Min. 3 Min.
Abstract Talk
AT 200
GaN IMPATT diode with pulsed watt-class microwave oscillation
Characterization, Electronic devices
14.10.2022
09:15 – 09:30 12 Min. 3 Min.
Abstract Talk
AT 231
Fabrication of BGaN neutron detectors and evaluation of the radiation detection characteristics
Growth, Novel Materials and Nanostructures