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Abstract Talk
AT 135

Space charge profile and carrier transport property in dopant-free GaN-based p-n junction formed by distributed polarization doping

Termin

Datum: 12.10.2022

Zeit: 11:15 – 11:30

Redezeit: 12 Min.

Diskussionszeit: 3 Min.

Ort / Stream:

Session

Substrates, field effects, transport

Themen

Characterization
Electronic devices

Mitwirkende

Takeru Kumabe (Nagoya University / JP), Dr. Seiya Kawasaki (Nagoya University / JP), Hirotaka Watanabe (Nagoya University / JP), Professor Shugo Nitta (Nagoya University / JP), Prof. Dr. Yoshio Honda (Nagoya University / JP), Prof. Dr. Hiroshi Amano (Nagoya University / JP)