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IWN 2022
Programm
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Professor Shugo Nitta
Nagoya University / JP
Nagoya University
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Datum
Vortrag
11.10.2022
16:15
–
16:30
12 Min.
3 Min.
Abstract Talk
AT 092
Decomposition and reaction analysis of triethylgallium for the effectivity of carbon incorporation in GaN MOVPE
Growth
Weitere Beteiligungen
11.10.2022
11:00
–
11:15
12 Min.
3 Min.
Abstract Talk
AT 075
Progress of morphology roughening of GaN drift layer on GaN substrates with slight off-angle grown by MOVPE
Electronic devices, Growth
11.10.2022
13:15
–
15:30
Poster Presentation
PP 151
Tuning of Ab initio reaction rate in GaN metalorganic vapor phase epitaxy by multiobjective genetic algorithm with high-resolution mass spectrometry data
Characterization, Growth
11.10.2022
16:15
–
16:30
12 Min.
3 Min.
Abstract Talk
AT 092
Decomposition and reaction analysis of triethylgallium for the effectivity of carbon incorporation in GaN MOVPE
Growth
12.10.2022
11:15
–
11:30
12 Min.
3 Min.
Abstract Talk
AT 135
Space charge profile and carrier transport property in dopant-free GaN-based p-n junction formed by distributed polarization doping
Characterization, Electronic devices
12.10.2022
14:45
–
15:00
12 Min.
3 Min.
Abstract Talk
AT 149
Highly effective activation of Mg–diffused p–type GaN using MgGaN
Characterization, Electronic devices
12.10.2022
17:30
–
17:45
12 Min.
3 Min.
Abstract Talk
AT 182
Fabrication of GaN/AlN resonant tunneling diodes by MOVPE
Characterization, Electronic devices
13.10.2022
09:45
–
10:00
12 Min.
3 Min.
Abstract Talk
AT 200
GaN IMPATT diode with pulsed watt-class microwave oscillation
Characterization, Electronic devices
14.10.2022
09:15
–
09:30
12 Min.
3 Min.
Abstract Talk
AT 243
Enhanced indium incorporation in full InGaN MQWs on high indium content InGaN platelets
Growth, Optical devices
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