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Abstract Talk
AT 198

Design, growth and characterization of GaN diodes with tunable turn-on voltage and lateral polar junctions for future superjunction devices

Termin

Datum: 13.10.2022

Zeit: 09:15 – 09:30

Redezeit: 12 Min.

Diskussionszeit: 3 Min.

Ort / Stream:

Salon Rome

Session

Vertical devices II

Themen

Characterization
Electronic devices

Mitwirkende

Dr. Dolar Khachariya (North Carolina State University / US), Dr. Dennis Szymanski (North Carolina State University / US), Dr. Pramod Reddy (Adroit Materials / US), Professor Erhard Kohn (North Carolina State University / US), Professor Zlatko Sitar (North Carolina State University / US; Adroit Materials / US), Professor Ramón Collazo (North Carolina State University / US), Professor Spyridon Pavlidis (North Carolina State University / US)