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IWN 2022
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Dr. Dolar Khachariya
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Weitere Beteiligungen
11.10.2022
16:00
–
16:15
12 Min.
3 Min.
Abstract Talk
AT 091
The impact of polarization field and point defects on the conduction mechanism in Mg-doped compositionally graded AlGaN
Characterization, Growth
12.10.2022
Poster Presentation
PP 356
On the DX in Al-rich AlGaN – the Ge shallow-to-deep level transition
Characterization, Growth
12.10.2022
Poster Presentation
PP 337
Surface and contact studies of GaN following ultra high pressure annealing for activation of implanted magnesium
Characterization, Electronic devices
12.10.2022
15:30
–
15:45
12 Min.
3 Min.
Abstract Talk
AT 152
High conductivity by DX mitigation and compensation reduction in Si and Ge implanted homoepitaxial AlN on single crystal AlN substrate
Characterization, Growth
12.10.2022
16:45
–
17:00
12 Min.
3 Min.
Abstract Talk
AT 179
High gain, large area and solar-blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates
Electronic devices, Optical devices
12.10.2022
17:15
–
17:30
12 Min.
3 Min.
Abstract Talk
AT 181
Si-doped AlN Schottky barrier diodes on bulk AlN substrates
Characterization, Electronic devices
13.10.2022
09:15
–
09:30
12 Min.
3 Min.
Abstract Talk
AT 198
Design, growth and characterization of GaN diodes with tunable turn-on voltage and lateral polar junctions for future superjunction devices
Characterization, Electronic devices
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