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Abstract Talk
AT 152

High conductivity by DX mitigation and compensation reduction in Si and Ge implanted homoepitaxial AlN on single crystal AlN substrate

Termin

Datum: 12.10.2022

Zeit: 15:30 – 15:45

Redezeit: 12 Min.

Diskussionszeit: 3 Min.

Ort / Stream:

Room Berlin

Session

Processes for Electronic Devices

Themen

Characterization
Growth

Mitwirkende

Dr. Pramod Reddy (Adroit Materials, Inc. / US), Pegah Bagheri (North carolina state university / DE), Cristyan Quiñones-Garcia (North carolina state university / DE), Dr. M. Hayden Breckenridge (North carolina state university / DE), Dr. Dolar Khachariya (Adroit Materials, Inc. / US), James Loveless (North carolina state university / DE), Yan Guan (North carolina state university / DE), Dr. Biplab Sarkar (North carolina state university / DE), Shun Washiyama (North carolina state university / DE), Ronny Kirste (Adroit Materials, Inc. / US), Will Mecouch (Adroit Materials, Inc. / US), Dr. James Tweedie (Adroit Materials, Inc. / US), Professor Ramón Collazo (North carolina state university / DE), Professor Zlatko Sitar (Adroit Materials, Inc. / US; North carolina state university / DE)