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IWN 2022
Programm
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Session
Session – Characterization
Processes for Electronic Devices
Termin
Datum:
12.10.2022
Zeit:
14:15
–
15:45
Ort / Stream:
Room Berlin
Chair
Professor Mitsuru Funato
Kyoto University / JP
Programm
14:15
–
14:30
12 Min.
3 Min.
Abstract Talk
AT 147
Optimization of ALE process for GaN with the substitution of Ar by Kr
Dr. Cedric Mannequin (University of Tsukuba / JP)
Characterization, Optical devices
14:30
–
14:45
12 Min.
3 Min.
Abstract Talk
AT 148
Suppression of impact ionization by carbon doping in the GaN buffer layer in InAlN/GaN-based HEMTs
Sujan Sarkar (Indian Institute of Technology Madras / IN)
Characterization, Electronic devices
14:45
–
15:00
12 Min.
3 Min.
Abstract Talk
AT 149
Highly effective activation of Mg–diffused p–type GaN using MgGaN
Dr. Yuta Itoh (Nagoya Univ. / JP)
Characterization, Electronic devices
15:00
–
15:15
12 Min.
3 Min.
Abstract Talk
AT 150
Study of electrooxidation of n-GaN in oxalic acid – porous nanostructure formation and chemical mechanism
Artem Shushanian (King Abdullah University of Science and Technology / SA)
Characterization, Optical devices
15:15
–
15:30
12 Min.
3 Min.
Abstract Talk
AT 151
Mg p-type formation in GaN substrate by excimer laser doping
Kaname Imokawa (Gigaphoton.Inc / JP)
Characterization, Growth
15:30
–
15:45
12 Min.
3 Min.
Abstract Talk
AT 152
High conductivity by DX mitigation and compensation reduction in Si and Ge implanted homoepitaxial AlN on single crystal AlN substrate
Dr. Pramod Reddy (Adroit Materials, Inc. / US)
Characterization, Growth
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