Session – Characterization
Processes for Electronic Devices

Programme

• 14:15 – 14:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 147

  Optimization of ALE process for GaN with the substitution of Ar by Kr

  • Dr. Cedric Mannequin (University of Tsukuba / JP)

   Characterization, Optical devices
• 14:30 – 14:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 148

  Suppression of impact ionization by carbon doping in the GaN buffer layer in InAlN/GaN-based HEMTs

  • Sujan Sarkar (Indian Institute of Technology Madras / IN)

   Characterization, Electronic devices
• 14:45 – 15:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 149

  Highly effective activation of Mg–diffused p–type GaN using MgGaN

  • Dr. Yuta Itoh (Nagoya Univ. / JP)

   Characterization, Electronic devices
• 15:00 – 15:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 150

  Study of electrooxidation of n-GaN in oxalic acid – porous nanostructure formation and chemical mechanism

  • Artem Shushanian (King Abdullah University of Science and Technology / SA)

   Characterization, Optical devices
• 15:15 – 15:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 151

  Mg p-type formation in GaN substrate by excimer laser doping

  • Kaname Imokawa (Gigaphoton.Inc / JP)

   Characterization, Growth
• 15:30 – 15:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 152

  High conductivity by DX mitigation and compensation reduction in Si and Ge implanted homoepitaxial AlN on single crystal AlN substrate

  • Dr. Pramod Reddy (Adroit Materials, Inc. / US)

   Characterization, Growth