Back
  • Abstract Talk
  • AT 148

Suppression of impact ionization by carbon doping in the GaN buffer layer in InAlN/GaN-based HEMTs

Sujan Sarkar
Indian Institute of Technology Madras / IN

Appointment

Date:
Time: –
Talk time:
Discussion time:
Location / Stream:
Room Berlin

Session

Processes for Electronic Devices

Topics

  • Characterization
  • Electronic devices

Authors

Sujan Sarkar (Indian Institute of Technology Madras / IN), Ramdas P. Khade (Indian Institute of Technology Madras / IN), Professor Nandita DasGupta (Indian Institute of Technology Madras / IN), Professor Amitava DasGupta (Indian Institute of Technology Madras / IN)

  • © Conventus Congressmanagement & Marketing GmbH