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Abstract Talk
AT 150

Study of electrooxidation of n-GaN in oxalic acid – porous nanostructure formation and chemical mechanism

Appointment

Date: 12/10/2022

Time: 15:00 – 15:15

Talk time: 12 Min.

Discussion time: 3 Min.

Location / Stream:

Room Berlin

Session

Processes for Electronic Devices

Topics

Characterization
Optical devices

Authors

Artem Shushanian (KAUST / SA), Dr. Daisuke Iida (KAUST / SA), Dr. Zhe Zhuang (KAUST / SA), Professor Yu Han (KAUST / SA), Professor Kazuhiro Ohkawa (KAUST / SA)