.css-1xsl8rf{width:100%;display:-webkit-box;display:-webkit-flex;display:-ms-flexbox;display:flex;-webkit-align-items:center;-webkit-box-align:center;-ms-flex-align:center;align-items:center;position:relative;overflow:hidden;background:var(--alert-bg);-webkit-padding-start:var(--chakra-space-4);padding-inline-start:var(--chakra-space-4);-webkit-padding-end:var(--chakra-space-4);padding-inline-end:var(--chakra-space-4);padding-top:var(--chakra-space-1);padding-bottom:var(--chakra-space-1);--alert-fg:var(--chakra-colors-orange-600);--alert-bg:var(--chakra-colors-orange-100);font-weight:var(--chakra-fontWeights-semibold);padding-left:var(--chakra-space-4);}.chakra-ui-dark .css-1xsl8rf:not([data-theme]),[data-theme=dark] .css-1xsl8rf:not([data-theme]),.css-1xsl8rf[data-theme=dark]{--alert-fg:var(--chakra-colors-orange-200);--alert-bg:rgba(251, 211, 141, 0.16);}@media screen and (min-width: 48em){.css-1xsl8rf{padding-left:var(--chakra-space-8);}}Bitte aktivieren Sie Javascript um alle Funktionen nutzen zu können und ihre Nutzererfahrung zu verbessern.

Dr. Biplab Sarkar

IIT Roorkee / IN

IIT Roorkee

Vortrag

10.10.2022
Poster Presentation
PP 047
A unified compact model development for gate lag in AlGaN/GaN HEMTs
Characterization, Electronic devices
12.10.2022
Poster Presentation
PP 379
Artificial neural network augmented and variability aware small signal circuit model development of GaN HEMTs
Characterization, Novel Materials and Nanostructures
12.10.2022
Poster Presentation
PP 390
High-performance UV photodiodes using lateral polarity structure GaN films
Electronic devices, Optical devices

Weitere Beteiligungen

10.10.2022
Poster Presentation
PP 047
A unified compact model development for gate lag in AlGaN/GaN HEMTs
Characterization, Electronic devices
11.10.2022
Poster Presentation
PP 110
Development of accurate small signal models for AlGaN/GaN MOS-HEMTs
Characterization, Electronic devices
12.10.2022
Poster Presentation
PP 390
High-performance UV photodiodes using lateral polarity structure GaN films
Electronic devices, Optical devices
12.10.2022
Poster Presentation
PP 379
Artificial neural network augmented and variability aware small signal circuit model development of GaN HEMTs
Characterization, Novel Materials and Nanostructures
12.10.2022
15:30 – 15:45 12 Min. 3 Min.
Abstract Talk
AT 152
High conductivity by DX mitigation and compensation reduction in Si and Ge implanted homoepitaxial AlN on single crystal AlN substrate
Characterization, Growth