.css-1xsl8rf{width:100%;display:-webkit-box;display:-webkit-flex;display:-ms-flexbox;display:flex;-webkit-align-items:center;-webkit-box-align:center;-ms-flex-align:center;align-items:center;position:relative;overflow:hidden;background:var(--alert-bg);-webkit-padding-start:var(--chakra-space-4);padding-inline-start:var(--chakra-space-4);-webkit-padding-end:var(--chakra-space-4);padding-inline-end:var(--chakra-space-4);padding-top:var(--chakra-space-1);padding-bottom:var(--chakra-space-1);--alert-fg:var(--chakra-colors-orange-600);--alert-bg:var(--chakra-colors-orange-100);font-weight:var(--chakra-fontWeights-semibold);padding-left:var(--chakra-space-4);}.chakra-ui-dark .css-1xsl8rf:not([data-theme]),[data-theme=dark] .css-1xsl8rf:not([data-theme]),.css-1xsl8rf[data-theme=dark]{--alert-fg:var(--chakra-colors-orange-200);--alert-bg:rgba(251, 211, 141, 0.16);}@media screen and (min-width: 48em){.css-1xsl8rf{padding-left:var(--chakra-space-8);}}Bitte aktivieren Sie Javascript um alle Funktionen nutzen zu können und ihre Nutzererfahrung zu verbessern.

Ronny Kirste

NCSU / US

NCSU

Vortrag

12.10.2022
11:15 – 11:30 12 Min. 3 Min.
Abstract Talk
AT 140
Performance and durability of state-of-the-art commercial deep-UV light emitting diodes
Optical devices
12.10.2022
11:45 – 12:00 12 Min. 3 Min.
Abstract Talk
AT 130
Tracking of point defects over the full compositional range of AlGaN via photoluminescence spectroscopy
Characterization

Weitere Beteiligungen

10.10.2022
14:15 – 14:30 12 Min. 3 Min.
Abstract Talk
AT 015
Growth of relaxed AlGaN on native GaN substrates
Growth, Optical devices
11.10.2022
16:00 – 16:15 12 Min. 3 Min.
Abstract Talk
AT 091
The impact of polarization field and point defects on the conduction mechanism in Mg-doped compositionally graded AlGaN
Characterization, Growth
11.10.2022
16:15 – 16:30 12 Min. 3 Min.
Abstract Talk
AT 082
Directly observing growth related defects and compositional fluctuations in facet controlled epitaxial lateral overgrowth (FACELO) lasers
Characterization, Growth
11.10.2022
Poster Presentation
PP 268
Absence of strain relaxation mechanism in thick Al_0.6Ga_0.4N epilayers grown on single-crystal AlN substrates
Characterization, Growth
12.10.2022
11:15 – 11:30 12 Min. 3 Min.
Abstract Talk
AT 140
Performance and durability of state-of-the-art commercial deep-UV light emitting diodes
Optical devices
12.10.2022
11:45 – 12:00 12 Min. 3 Min.
Abstract Talk
AT 130
Tracking of point defects over the full compositional range of AlGaN via photoluminescence spectroscopy
Characterization
12.10.2022
Poster Presentation
PP 356
On the DX in Al-rich AlGaN – the Ge shallow-to-deep level transition
Characterization, Growth
12.10.2022
15:30 – 15:45 12 Min. 3 Min.
Abstract Talk
AT 152
High conductivity by DX mitigation and compensation reduction in Si and Ge implanted homoepitaxial AlN on single crystal AlN substrate
Characterization, Growth
12.10.2022
16:45 – 17:00 12 Min. 3 Min.
Abstract Talk
AT 179
High gain, large area and solar-blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates
Electronic devices, Optical devices
12.10.2022
17:15 – 17:30 12 Min. 3 Min.
Abstract Talk
AT 181
Si-doped AlN Schottky barrier diodes on bulk AlN substrates
Characterization, Electronic devices