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Ronny Kirste

NCSU / US

NCSU

Speaker

12/10/2022
11:15 – 11:30 12 Min. 3 Min.
Abstract Talk
AT 140
Performance and durability of state-of-the-art commercial deep-UV light emitting diodes
Optical devices
12/10/2022
11:45 – 12:00 12 Min. 3 Min.
Abstract Talk
AT 130
Tracking of point defects over the full compositional range of AlGaN via photoluminescence spectroscopy
Characterization

Further involvements

10/10/2022
14:15 – 14:30 12 Min. 3 Min.
Abstract Talk
AT 015
Growth of relaxed AlGaN on native GaN substrates
Growth, Optical devices
11/10/2022
16:00 – 16:15 12 Min. 3 Min.
Abstract Talk
AT 091
The impact of polarization field and point defects on the conduction mechanism in Mg-doped compositionally graded AlGaN
Characterization, Growth
11/10/2022
16:15 – 16:30 12 Min. 3 Min.
Abstract Talk
AT 082
Directly observing growth related defects and compositional fluctuations in facet controlled epitaxial lateral overgrowth (FACELO) lasers
Characterization, Growth
11/10/2022
Poster Presentation
PP 268
Absence of strain relaxation mechanism in thick Al_0.6Ga_0.4N epilayers grown on single-crystal AlN substrates
Characterization, Growth
12/10/2022
11:15 – 11:30 12 Min. 3 Min.
Abstract Talk
AT 140
Performance and durability of state-of-the-art commercial deep-UV light emitting diodes
Optical devices
12/10/2022
11:45 – 12:00 12 Min. 3 Min.
Abstract Talk
AT 130
Tracking of point defects over the full compositional range of AlGaN via photoluminescence spectroscopy
Characterization
12/10/2022
Poster Presentation
PP 356
On the DX in Al-rich AlGaN – the Ge shallow-to-deep level transition
Characterization, Growth
12/10/2022
15:30 – 15:45 12 Min. 3 Min.
Abstract Talk
AT 152
High conductivity by DX mitigation and compensation reduction in Si and Ge implanted homoepitaxial AlN on single crystal AlN substrate
Characterization, Growth
12/10/2022
16:45 – 17:00 12 Min. 3 Min.
Abstract Talk
AT 179
High gain, large area and solar-blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates
Electronic devices, Optical devices
12/10/2022
17:15 – 17:30 12 Min. 3 Min.
Abstract Talk
AT 181
Si-doped AlN Schottky barrier diodes on bulk AlN substrates
Characterization, Electronic devices