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Pegah Bagheri

Weitere Beteiligungen

  • –   
    • Abstract Talk
    • AT 091
    The impact of polarization field and point defects on the conduction mechanism in Mg-doped compositionally graded AlGaN
     Characterization, Growth
  • –   
    • Abstract Talk
    • AT 130
    Tracking of point defects over the full compositional range of AlGaN via photoluminescence spectroscopy
     Characterization
    • Poster Presentation
    • PP 356
    On the DX in Al-rich AlGaN – the Ge shallow-to-deep level transition
     Characterization, Growth
  • –   
    • Abstract Talk
    • AT 152
    High conductivity by DX mitigation and compensation reduction in Si and Ge implanted homoepitaxial AlN on single crystal AlN substrate
     Characterization, Growth
  • –   
    • Abstract Talk
    • AT 181
    Si-doped AlN Schottky barrier diodes on bulk AlN substrates
     Characterization, Electronic devices
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