Pegah Bagheri

Further involvements

• 11/10/2022

  16:00 – 16:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 091

  The impact of polarization field and point defects on the conduction mechanism in Mg-doped compositionally graded AlGaN

   Characterization, Growth
• 12/10/2022

  11:45 – 12:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 130

  Tracking of point defects over the full compositional range of AlGaN via photoluminescence spectroscopy

   Characterization
• 12/10/2022

  • Poster Presentation
  • PP 356

  On the DX in Al-rich AlGaN – the Ge shallow-to-deep level transition

   Characterization, Growth
• 12/10/2022

  15:30 – 15:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 152

  High conductivity by DX mitigation and compensation reduction in Si and Ge implanted homoepitaxial AlN on single crystal AlN substrate

   Characterization, Growth
• 12/10/2022

  17:15 – 17:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 181

  Si-doped AlN Schottky barrier diodes on bulk AlN substrates

   Characterization, Electronic devices