Dr. James Tweedie

Weitere Beteiligungen

• 10.10.2022

  14:15 – 14:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 015

  Growth of relaxed AlGaN on native GaN substrates

   Growth, Optical devices
• 11.10.2022

  • Poster Presentation
  • PP 268

  Absence of strain relaxation mechanism in thick Al_0.6Ga_0.4N epilayers grown on single-crystal AlN substrates

   Characterization, Growth
• 12.10.2022

  • Poster Presentation
  • PP 337

  Surface and contact studies of GaN following ultra high pressure annealing for activation of implanted magnesium

   Characterization, Electronic devices
• 12.10.2022

  15:30 – 15:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 152

  High conductivity by DX mitigation and compensation reduction in Si and Ge implanted homoepitaxial AlN on single crystal AlN substrate

   Characterization, Growth
• 12.10.2022

  16:45 – 17:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 179

  High gain, large area and solar-blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates

   Electronic devices, Optical devices
• 12.10.2022

  17:15 – 17:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 181

  Si-doped AlN Schottky barrier diodes on bulk AlN substrates

   Characterization, Electronic devices