Dr. Dolar Khachariya

Further involvements

• 11/10/2022

  16:00 – 16:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 091

  The impact of polarization field and point defects on the conduction mechanism in Mg-doped compositionally graded AlGaN

   Characterization, Growth
• 12/10/2022

  • Poster Presentation
  • PP 356

  On the DX in Al-rich AlGaN – the Ge shallow-to-deep level transition

   Characterization, Growth
• 12/10/2022

  • Poster Presentation
  • PP 337

  Surface and contact studies of GaN following ultra high pressure annealing for activation of implanted magnesium

   Characterization, Electronic devices
• 12/10/2022

  15:30 – 15:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 152

  High conductivity by DX mitigation and compensation reduction in Si and Ge implanted homoepitaxial AlN on single crystal AlN substrate

   Characterization, Growth
• 12/10/2022

  16:45 – 17:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 179

  High gain, large area and solar-blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates

   Electronic devices, Optical devices
• 12/10/2022

  17:15 – 17:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 181

  Si-doped AlN Schottky barrier diodes on bulk AlN substrates

   Characterization, Electronic devices
• 13/10/2022

  09:15 – 09:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 198

  Design, growth and characterization of GaN diodes with tunable turn-on voltage and lateral polar junctions for future superjunction devices

   Characterization, Electronic devices