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IWN 2022
Programm
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Session
Session – Electronic Devices
Vertical devices II
Termin
Datum:
13.10.2022
Zeit:
08:30
–
10:00
Ort / Stream:
Salon Rome
Chair
Dr. Yvon Cordier
CRHEA-CNRS / FR
Prof. Dr. Asif Khan
University of South Carolina / US
Programm
08:30
–
09:00
25 Min.
5 Min.
Invited Talk
IT 50
Process challenges and perspectives of vertical GaN power transistors on foreign substrates
Dr. Christian Huber (Robert Bosch GmbH / DE)
09:00
–
09:15
12 Min.
3 Min.
Abstract Talk
AT 197
Effects of vertical leakage on the dynamic buffer response of 650V normally-off GaN high electron mobility transistors
Dr. Indraneel Sanyal (University of Bristol / GB)
Characterization, Electronic devices
09:15
–
09:30
12 Min.
3 Min.
Abstract Talk
AT 198
Design, growth and characterization of GaN diodes with tunable turn-on voltage and lateral polar junctions for future superjunction devices
Professor Spyridon Pavlidis (North Carolina State University / US)
Characterization, Electronic devices
09:30
–
09:45
12 Min.
3 Min.
Abstract Talk
AT 199
RON,sp vs. BV trade-off determination for AlxGa1-xN alloys in superjunction devices
Mohamed Torky (Rensselaer Polytechnic Institute / US)
Electronic devices
09:45
–
10:00
12 Min.
3 Min.
Abstract Talk
AT 200
GaN IMPATT diode with pulsed watt-class microwave oscillation
Dr. Seiya Kawasaki (Nagoya University / JP)
Characterization, Electronic devices
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