Session – Electronic Devices
Vertical devices II

Programm

• 08:30 – 09:00 25 Min. 5 Min.

  • Invited Talk
  • IT 50

  Process challenges and perspectives of vertical GaN power transistors on foreign substrates

  • Dr. Christian Huber (Robert Bosch GmbH / DE)
• 09:00 – 09:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 197

  Effects of vertical leakage on the dynamic buffer response of 650V normally-off GaN high electron mobility transistors

  • Dr. Indraneel Sanyal (University of Bristol / GB)

   Characterization, Electronic devices
• 09:15 – 09:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 198

  Design, growth and characterization of GaN diodes with tunable turn-on voltage and lateral polar junctions for future superjunction devices

  • Professor Spyridon Pavlidis (North Carolina State University / US)

   Characterization, Electronic devices
• 09:30 – 09:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 199

  RON,sp vs. BV trade-off determination for AlxGa1-xN alloys in superjunction devices

  • Mohamed Torky (Rensselaer Polytechnic Institute / US)

   Electronic devices
• 09:45 – 10:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 200

  GaN IMPATT diode with pulsed watt-class microwave oscillation

  • Dr. Seiya Kawasaki (Nagoya University / JP)

   Characterization, Electronic devices