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IWN 2022
Programm
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Dr. Yvon Cordier
CRHEA-CNRS / FR
CRHEA-CNRS
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Datum
Vorsitz
10.10.2022
13:45
–
15:15
Session
CMOS, high temperature, data transmission
Salon Rome
13.10.2022
08:30
–
10:00
Session
Vertical devices II
Salon Rome
Vortrag
12.10.2022
11:00
–
11:15
12 Min.
3 Min.
Abstract Talk
AT 260
Comparison of AlGaN/GaN high electron mobility transistors grown by MOVPE on 3C-SiC/Si(111), Si(111) and 6H-SiC for RF applications
Electronic devices, Growth
12.10.2022
15:30
–
15:45
12 Min.
3 Min.
Abstract Talk
AT 160
Co-integrated E-mode and D-mode Al(Ga)N/GaN HEMTs via p-GaN sublimation and local area regrowth of AlGaN
Electronic devices, Growth
Weitere Beteiligungen
10.10.2022
14:15
–
14:30
12 Min.
3 Min.
Abstract Talk
AT 007
AlGaN channel high electron mobility transistors on bulk AlN substrate
Electronic devices, Novel Materials and Nanostructures
10.10.2022
Poster Presentation
PP 027
Temperature dependence of transport properties in AlGaN channel heterostructures
Characterization, Electronic devices
11.10.2022
Poster Presentation
PP 213
Electrical behavior of vertical Schottky diode on GaN homoepitaxy
Characterization, Electronic devices
12.10.2022
09:00
–
09:15
12 Min.
3 Min.
Abstract Talk
AT 123
Ammonia source molecular beam epitaxy of ScxAl1-xN/GaN high electron mobility transistor heterostructures
Electronic devices, Growth
12.10.2022
09:45
–
10:00
12 Min.
3 Min.
Abstract Talk
AT 118
Electric field imaging in AlGaN/GaN high electron mobility transistors grown on AlN substrates
Characterization, Electronic devices
12.10.2022
11:00
–
11:15
12 Min.
3 Min.
Abstract Talk
AT 260
Comparison of AlGaN/GaN high electron mobility transistors grown by MOVPE on 3C-SiC/Si(111), Si(111) and 6H-SiC for RF applications
Electronic devices, Growth
12.10.2022
15:30
–
15:45
12 Min.
3 Min.
Abstract Talk
AT 160
Co-integrated E-mode and D-mode Al(Ga)N/GaN HEMTs via p-GaN sublimation and local area regrowth of AlGaN
Electronic devices, Growth
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