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IWN 2022
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Session
Session – Electronic Devices
CMOS, high temperature, data transmission
Termin
Datum:
10.10.2022
Zeit:
13:45
–
15:15
Ort / Stream:
Salon Rome
Chair
Dr. Yvon Cordier
CRHEA-CNRS / FR
Programm
13:45
–
14:15
25 Min.
5 Min.
Invited Talk
IT 04
Thin channel FETs on AlN: nFETs and pFETs for nitride CMOS
Professor Debdeep Jena (Cornell University / US)
14:15
–
14:30
12 Min.
3 Min.
Abstract Talk
AT 007
AlGaN channel high electron mobility transistors on bulk AlN substrate
Jash Mehta (IEMN-CNRS / FR)
Electronic devices, Novel Materials and Nanostructures
14:30
–
14:45
12 Min.
3 Min.
Abstract Talk
AT 008
Combining low trapping effects and high electron confinement in sub-100 nm AlN/GaN HEMTs under high electric field
Dr. Srisaran Venkatachalam (Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN-CNRS) UMR8520 / FR)
Electronic devices, Novel Materials and Nanostructures
14:45
–
15:00
12 Min.
3 Min.
Abstract Talk
AT 009
High-temperature performance of AlN MESFETs
Masanobu Hiroki (NTT Basic Research Labs. / JP)
Electronic devices, Novel Materials and Nanostructures
15:00
–
15:15
12 Min.
3 Min.
Abstract Talk
AT 010
15 Gb/s Terahertz modulators using three-terminal InAlN/GaN displacement-field nano-switches
Mohammad Samizadeh Nikoo (École Polytechnique Fédérale de Lausanne / CH)
Characterization, Electronic devices
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