Session – Electronic Devices
CMOS, high temperature, data transmission

Programme

• 13:45 – 14:15 25 Min. 5 Min.

  • Invited Talk
  • IT 04

  Thin channel FETs on AlN: nFETs and pFETs for nitride CMOS

  • Professor Debdeep Jena (Cornell University / US)
• 14:15 – 14:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 007

  AlGaN channel high electron mobility transistors on bulk AlN substrate

  • Jash Mehta (IEMN-CNRS / FR)

   Electronic devices, Novel Materials and Nanostructures
• 14:30 – 14:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 008

  Combining low trapping effects and high electron confinement in sub-100 nm AlN/GaN HEMTs under high electric field

  • Dr. Srisaran Venkatachalam (Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN-CNRS) UMR8520 / FR)

   Electronic devices, Novel Materials and Nanostructures
• 14:45 – 15:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 009

  High-temperature performance of AlN MESFETs

  • Masanobu Hiroki (NTT Basic Research Labs. / JP)

   Electronic devices, Novel Materials and Nanostructures
• 15:00 – 15:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 010

  15 Gb/s Terahertz modulators using three-terminal InAlN/GaN displacement-field nano-switches

  • Mohammad Samizadeh Nikoo (École Polytechnique Fédérale de Lausanne / CH)

   Characterization, Electronic devices