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IWN 2022
Programme
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DE
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Dr. Yvon Cordier
CRHEA-CNRS / FR
CRHEA-CNRS
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Date
Chair
10/10/2022
13:45
–
15:15
Session
CMOS, high temperature, data transmission
Salon Rome
13/10/2022
08:30
–
10:00
Session
Vertical devices II
Salon Rome
Speaker
12/10/2022
11:00
–
11:15
12 Min.
3 Min.
Abstract Talk
AT 260
Comparison of AlGaN/GaN high electron mobility transistors grown by MOVPE on 3C-SiC/Si(111), Si(111) and 6H-SiC for RF applications
Electronic devices, Growth
12/10/2022
15:30
–
15:45
12 Min.
3 Min.
Abstract Talk
AT 160
Co-integrated E-mode and D-mode Al(Ga)N/GaN HEMTs via p-GaN sublimation and local area regrowth of AlGaN
Electronic devices, Growth
Further involvements
10/10/2022
14:15
–
14:30
12 Min.
3 Min.
Abstract Talk
AT 007
AlGaN channel high electron mobility transistors on bulk AlN substrate
Electronic devices, Novel Materials and Nanostructures
10/10/2022
Poster Presentation
PP 027
Temperature dependence of transport properties in AlGaN channel heterostructures
Characterization, Electronic devices
11/10/2022
Poster Presentation
PP 213
Electrical behavior of vertical Schottky diode on GaN homoepitaxy
Characterization, Electronic devices
12/10/2022
09:00
–
09:15
12 Min.
3 Min.
Abstract Talk
AT 123
Ammonia source molecular beam epitaxy of ScxAl1-xN/GaN high electron mobility transistor heterostructures
Electronic devices, Growth
12/10/2022
09:45
–
10:00
12 Min.
3 Min.
Abstract Talk
AT 118
Electric field imaging in AlGaN/GaN high electron mobility transistors grown on AlN substrates
Characterization, Electronic devices
12/10/2022
11:00
–
11:15
12 Min.
3 Min.
Abstract Talk
AT 260
Comparison of AlGaN/GaN high electron mobility transistors grown by MOVPE on 3C-SiC/Si(111), Si(111) and 6H-SiC for RF applications
Electronic devices, Growth
12/10/2022
15:30
–
15:45
12 Min.
3 Min.
Abstract Talk
AT 160
Co-integrated E-mode and D-mode Al(Ga)N/GaN HEMTs via p-GaN sublimation and local area regrowth of AlGaN
Electronic devices, Growth
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