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Abstract Talk
AT 123

Ammonia source molecular beam epitaxy of ScxAl1-xN/GaN high electron mobility transistor heterostructures

Appointment

Date: 12/10/2022

Time: 09:00 – 09:15

Talk time: 12 Min.

Discussion time: 3 Min.

Location / Stream:

Salon Moskau

Session

Sc/B containing III-nitrides

Topics

Electronic devices
Growth

Authors

Caroline Elias (CRHEA / FR), Dr. Maxime Hugues (CRHEA / FR), Dr. Yvon Cordier (CRHEA / FR)