Session – Growth
Sc/B containing III-nitrides

Programme

• 08:30 – 09:00 25 Min. 5 Min.

  • Invited Talk
  • IT 32

  Growth of AlScN/GaN heterostructures by metal-organic chemical vapor deposition: challenges and perspectives

  • Dr. Stefano Leone (Fraunhofer-Institut für Angewandte Festkörperphysik IAF / DE)
• 09:00 – 09:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 123

  Ammonia source molecular beam epitaxy of ScxAl1-xN/GaN high electron mobility transistor heterostructures

  • Caroline Elias (CRHEA / FR)

   Electronic devices, Growth
• 09:15 – 09:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 124

  MOCVD-grown AlScN for MEMS-based acoustic filter applications

  • Dr. Craig Moe (Akoustis / US)

   Electronic devices, Growth
• 09:30 – 09:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 125

  Vertical cation segregation during A­_x­B_1-xN epitaxy

  • Christopher M. Matthews (Georgia Institute of Technology / US)

   Characterization, Growth
• 09:45 – 10:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 126

  Van der Waals heterostructure of hexagonal boron nitride with an AlGaN/GaN epitaxial wafer for high-performance radio-frequency applications

  • Seokho Moon (Pohang University of Science and Technology / KR)

   Electronic devices, Growth