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Christopher M. Matthews

Georgia Institute of Technology / US

Georgia Institute of Technology

Speaker

12/10/2022
09:30 – 09:45 12 Min. 3 Min.
Abstract Talk
AT 125
Vertical cation segregation during A_xB_1-xN epitaxy
Characterization, Growth
12/10/2022
17:00 – 17:15 12 Min. 3 Min.
Abstract Talk
AT 180
Realization of AlN homojunction PN diodes
Electronic devices, Growth

Further involvements

11/10/2022
Poster Presentation
PP 221
Observation compositional modulation variation and reduction in rapidly grown AlGaN self-assembled superlattices by transmission electron microscopy
Characterization, Growth
11/10/2022
Poster Presentation
PP 284
The effect of Be doping concentration on thermal conductivity of p-type AlN thin films
Characterization, Novel Materials and Nanostructures
11/10/2022
Poster Presentation
PP 271
Advancements in aluminum indium nitride growth over a wide compositional range – towards long wavelength III-Nitride optoelectronics
Characterization, Growth
12/10/2022
09:15 – 09:30 12 Min. 3 Min.
Abstract Talk
AT 116
Demonstration of Sc0.2Al0.8N HEMT structures with a sheet resistance of 150 Ω/□ and a sheet charge of 5.9x1013 cm-2 with phase pure, metal rich growth
Electronic devices, Growth
12/10/2022
09:30 – 09:45 12 Min. 3 Min.
Abstract Talk
AT 125
Vertical cation segregation during A_xB_1-xN epitaxy
Characterization, Growth
12/10/2022
Poster Presentation
PP 365
Improved nucleation of 111 ScN thin films
Characterization, Growth
12/10/2022
Poster Presentation
PP 341
p-type AlN based heteroepitaxial diodes with Schottky, PIN and junction barrier Schottky character achieving significant breakdown performance
Electronic devices, Growth
12/10/2022
17:00 – 17:15 12 Min. 3 Min.
Abstract Talk
AT 180
Realization of AlN homojunction PN diodes
Electronic devices, Growth
14/10/2022
09:30 – 09:45 12 Min. 3 Min.
Abstract Talk
AT 228
Observation of interfacial strain relaxation and electron beam damage thresholds in Al_0.3In_0.7N/GaN heterostructures by transmission electron microscope
Characterization, Growth