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Poster Presentation
PP 341

p-type AlN based heteroepitaxial diodes with Schottky, PIN and junction barrier Schottky character achieving significant breakdown performance

Appointment

Date: 12/10/2022

Time: 12:00 – 12:00

Talk time: 0 Min.

Discussion time: 0 Min.

Location / Stream:

Topic Electronic devices

Session

Electronic devices

Topics

Electronic devices
Growth

Authors

Timothy Stamm (Georgia Institute of Technology / US), Dr. Habib Ahmad (Georgia Institute of Technology / US), Zachary Engel (Georgia Institute of Technology / US), Christopher M. Matthews (Georgia Institute of Technology / US), Prof. Dr. William Alan Doolittle (Georgia Institute of Technology / US), Emily Marshall (Georgia Institute of Technology / US)