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  • Abstract Talk
  • AT 126

Van der Waals heterostructure of hexagonal boron nitride with an AlGaN/GaN epitaxial wafer for high-performance radio-frequency applications

Seokho Moon
Pohang University of Science and Technology / KR

Appointment

Date:
Time: –
Talk time:
Discussion time:
Location / Stream:
Salon Moskau

Session

Sc/B containing III-nitrides

Topics

  • Electronic devices
  • Growth

Authors

Seokho Moon (Pohang University of Science and Technology / KR), Sung-Jae Chang (Electronics and Telecommunications Research Institute (ETRI) / KR), Youngjae Kim (Daegu Gyeongbuk Institute of Science and Technology (DGIST) / KR), Odongo Francis Ngome Okello (Pohang University of Science and Technology / KR), Jiye Kim (Pohang University of Science and Technology / KR), Jaewon Kim (Pohang University of Science and Technology / KR), Hyun-Wook Jung (Electronics and Telecommunications Research Institute (ETRI) / KR), Ho-Kyun Ahn (Electronics and Telecommunications Research Institute (ETRI) / KR), Dr. Dong-Seok Kim (Korea Atomic Energy Research Institute (KAERI) / KR), Professor Si-Young Choi (Pohang University of Science and Technology / KR), JaeDong Lee (Daegu Gyeongbuk Institute of Science and Technology (DGIST) / KR), Jong-Won Lim (Electronics and Telecommunications Research Institute (ETRI) / KR), Professor Jong Kyu Kim (Pohang University of Science and Technology / KR)

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