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Abstract Talk
AT 260

Comparison of AlGaN/GaN high electron mobility transistors grown by MOVPE on 3C-SiC/Si(111), Si(111) and 6H-SiC for RF applications

Appointment

Date: 12/10/2022

Time: 11:00 – 11:15

Talk time: 12 Min.

Discussion time: 3 Min.

Location / Stream:

Salon Rome

Session

Substrates, field effects, transport

Topics

Electronic devices
Growth

Authors

Dr. Yvon Cordier (CRHEA-CNRS / FR)