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Abstract Talk
AT 007

AlGaN channel high electron mobility transistors on bulk AlN substrate

Appointment

Date: 10/10/2022

Time: 14:15 – 14:30

Talk time: 12 Min.

Discussion time: 3 Min.

Location / Stream:

Salon Rome

Session

CMOS, high temperature, data transmission

Topics

Electronic devices
Novel Materials and Nanostructures

Authors

Jash Mehta (IEMN-CNRS / FR), Idriss Abid (IEMN-CNRS / FR), Reda El Waradi (CRHEA-CNRS / FR), Dr. Yvon Cordier (CRHEA-CNRS / FR), Dr. Farid Medjdoub (IEMN-CNRS / FR)