Session – Growth
AlN Growth

Programme

• 15:45 – 16:15 25 Min. 5 Min.

  • Invited Talk
  • IT 11

  Practical N-type Doping in AlN for Power Electronics

  • Professor Ramón Collazo (North Carolina State University / US)
• 16:15 – 16:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 035

  Impact of buffer layer on flatness and crystalline quality of N-polar AlN on sapphire substrate

  • Prof. Dr. Narihito Okada (Yamaguchi University / JP)

   Electronic devices, Growth
• 16:30 – 16:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 036

  Control of AlN polarity on sapphire substrate and growth of AlN with both Al- and N-polarities

  • Prof. Dr. Narihito Okada (Yamaguchi University / JP)

   Growth, Optical devices
• 16:45 – 17:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 037

  The high-temperature growth in AlN with the unaffected parasitic reaction by Jet gas stream MOVPE

  • Professor Kentaro Nagamatsu (Tokushima University / JP)

   Growth
• 17:00 – 17:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 038

  Optimization mechanism for nitrogen-polar AlN grown by MOVPE on sapphire

  • Dr. Pietro Pampili (Nagoya University / JP)

   Growth, Novel Materials and Nanostructures