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IWN 2022
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Prof. Dr. Narihito Okada
Yamaguchi University / JP
Yamaguchi University
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Speaker
10/10/2022
16:15
–
16:30
12 Min.
3 Min.
Abstract Talk
AT 035
Impact of buffer layer on flatness and crystalline quality of N-polar AlN on sapphire substrate
Electronic devices, Growth
10/10/2022
16:30
–
16:45
12 Min.
3 Min.
Abstract Talk
AT 036
Control of AlN polarity on sapphire substrate and growth of AlN with both Al- and N-polarities
Growth, Optical devices
11/10/2022
11:45
–
12:00
12 Min.
3 Min.
Abstract Talk
AT 068
Investigation of electrical properties of N-Polar AlGaN/AlN heterostructure field effect transistors
Electronic devices, Growth
12/10/2022
Poster Presentation
PP 359
Improvement of crystallinity and flatness of N-polar AlN by polarity inversion from Al-polar AlN on vicinal sapphire substrate
Electronic devices, Growth
12/10/2022
17:00
–
17:15
12 Min.
3 Min.
Abstract Talk
AT 190
Si doping effects in AlGaN channel layer on performance of N-polar AlGaN/AlN heterojunction FETs
Electronic devices, Growth
Further involvements
10/10/2022
16:15
–
16:30
12 Min.
3 Min.
Abstract Talk
AT 035
Impact of buffer layer on flatness and crystalline quality of N-polar AlN on sapphire substrate
Electronic devices, Growth
10/10/2022
16:30
–
16:45
12 Min.
3 Min.
Abstract Talk
AT 036
Control of AlN polarity on sapphire substrate and growth of AlN with both Al- and N-polarities
Growth, Optical devices
11/10/2022
11:45
–
12:00
12 Min.
3 Min.
Abstract Talk
AT 068
Investigation of electrical properties of N-Polar AlGaN/AlN heterostructure field effect transistors
Electronic devices, Growth
11/10/2022
Poster Presentation
PP 118
Effects of GaN-cap layer thickness on luminescence properties of green luminescent InGaN-based multiple quantum wells
Characterization, Optical devices
11/10/2022
16:00
–
16:15
12 Min.
3 Min.
Abstract Talk
AT 081
High temperature stimulated emission from AlGaN UV-C multiple quantum wells
Characterization, Optical devices
12/10/2022
Poster Presentation
PP 361
Semipolar {11-22} AlInN epitaxial layers grown on a fully relaxed semipolar GaInN/GaN/m-plane sapphire template by MOCVD
Characterization, Growth
12/10/2022
Poster Presentation
PP 359
Improvement of crystallinity and flatness of N-polar AlN by polarity inversion from Al-polar AlN on vicinal sapphire substrate
Electronic devices, Growth
12/10/2022
17:00
–
17:15
12 Min.
3 Min.
Abstract Talk
AT 190
Si doping effects in AlGaN channel layer on performance of N-polar AlGaN/AlN heterojunction FETs
Electronic devices, Growth
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