Back
  • Poster Presentation
  • PP 118

Effects of GaN-cap layer thickness on luminescence properties of green luminescent InGaN-based multiple quantum wells

Appointment

Date:
Time:
Talk time:
Discussion time:
Location / Stream:
Topic Characterization

Session

Characterization

Topics

  • Characterization
  • Optical devices

Authors

Dr. Hideaki Murotani (Yamaguchi University / JP; National Institute of Technology, Tokuyama College / JP), Keigo Nakatsuru (Yamaguchi University / JP), Satoshi Kurai (Yamaguchi University / JP), Prof. Dr. Narihito Okada (Yamaguchi University / JP), Yoshiki Yano (Taiyo Nippon Sanso / JP), Shuichi Koseki (Taiyo Nippon Sanso / JP), Guanxi Piao (Taiyo Nippon Sanso / JP), Professor Yoichi Yamada (Yamaguchi University / JP)

  • © Conventus Congressmanagement & Marketing GmbH