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Poster Presentation
PP 361

Semipolar {11-22} AlInN epitaxial layers grown on a fully relaxed semipolar GaInN/GaN/m-plane sapphire template by MOCVD

Appointment

Date: 12/10/2022

Time: 12:00 – 12:00

Talk time: 0 Min.

Discussion time: 0 Min.

Location / Stream:

Session

Topics

Characterization
Growth

Authors

Takahiro Fujisawa (Nagoya Institute of Technology / JP), Makoto Miyoshi (Nagoya Institute of Technology / JP), Takashi Egawa (Nagoya Institute of Technology / JP), Professor Tetsuya Takeuchi (Meijo University / JP), Prof. Dr. Narihito Okada (Yamaguchi University / JP), Kazuyuki Tadatomo (Yamaguchi University / JP)