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IWN 2022
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Professor Tetsuya Takeuchi
Meijo University / JP
Meijo University
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Date
Invited Speaker
13/10/2022
09:00
–
09:30
25 Min.
5 Min.
Invited Talk
IT 52
GaN-based tunnel junctions and laser diodes
Further involvements
10/10/2022
14:45
–
15:00
12 Min.
3 Min.
Abstract Talk
AT 017
Crystal growth of lattice-relaxed intermediate AlN molar fraction and high quality AlGaN grown on periodically formed AlN nanopillars
Growth, Optical devices
12/10/2022
Poster Presentation
PP 353
MOVPE growth of GaInN QWs and green LEDs on GaN (0001) substrates
Growth, Optical devices
12/10/2022
Poster Presentation
PP 361
Semipolar {11-22} AlInN epitaxial layers grown on a fully relaxed semipolar GaInN/GaN/m-plane sapphire template by MOCVD
Characterization, Growth
12/10/2022
17:15
–
17:30
12 Min.
3 Min.
Abstract Talk
AT 186
Effect of reducing dislocation and pit-hillock densities in AlGaN templates on UV-B laser diode performances
Growth, Optical devices
12/10/2022
17:30
–
17:45
12 Min.
3 Min.
Abstract Talk
AT 187
Improvement of performance for UV-B laser diodes by using dielectric multilayer distributed Bragg reflector
Characterization, Optical devices
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