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Professor Tetsuya Takeuchi

Meijo University / JP

Meijo University

Invited Speaker

13.10.2022
09:00 – 09:30 25 Min. 5 Min.
Invited Talk
IT 52
GaN-based tunnel junctions and laser diodes

Weitere Beteiligungen als Autor

10.10.2022
14:45 – 15:00 12 Min. 3 Min.
Abstract Talk
AT 017
Crystal growth of lattice-relaxed intermediate AlN molar fraction and high quality AlGaN grown on periodically formed AlN nanopillars
Optical devices, Growth
12.10.2022
Poster Presentation
PP 353
MOVPE growth of GaInN QWs and green LEDs on GaN (0001) substrates
Optical devices, Growth
12.10.2022
Poster Presentation
PP 361
Semipolar {11-22} AlInN epitaxial layers grown on a fully relaxed semipolar GaInN/GaN/m-plane sapphire template by MOCVD
Characterization, Growth
12.10.2022
17:15 – 17:30 12 Min. 3 Min.
Abstract Talk
AT 186
Effect of reducing dislocation and pit-hillock densities in AlGaN templates on UV-B laser diode performances
Optical devices, Growth
12.10.2022
17:30 – 17:45 12 Min. 3 Min.
Abstract Talk
AT 187
Improvement of performance for UV-B laser diodes by using dielectric multilayer distributed Bragg reflector
Optical devices, Characterization