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Professor Tetsuya Takeuchi

Meijo University / JP

Meijo University

Invited Speaker

13.10.2022
09:00 – 09:30 25 Min. 5 Min.
Invited Talk
IT 52
GaN-based tunnel junctions and laser diodes

Weitere Beteiligungen

10.10.2022
14:45 – 15:00 12 Min. 3 Min.
Abstract Talk
AT 017
Crystal growth of lattice-relaxed intermediate AlN molar fraction and high quality AlGaN grown on periodically formed AlN nanopillars
Growth, Optical devices
12.10.2022
Poster Presentation
PP 361
Semipolar {11-22} AlInN epitaxial layers grown on a fully relaxed semipolar GaInN/GaN/m-plane sapphire template by MOCVD
Characterization, Growth
12.10.2022
Poster Presentation
PP 353
MOVPE growth of GaInN QWs and green LEDs on GaN (0001) substrates
Growth, Optical devices
12.10.2022
17:15 – 17:30 12 Min. 3 Min.
Abstract Talk
AT 186
Effect of reducing dislocation and pit-hillock densities in AlGaN templates on UV-B laser diode performances
Growth, Optical devices
12.10.2022
17:30 – 17:45 12 Min. 3 Min.
Abstract Talk
AT 187
Improvement of performance for UV-B laser diodes by using dielectric multilayer distributed Bragg reflector
Characterization, Optical devices