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Abstract Talk
AT 017

Crystal growth of lattice-relaxed intermediate AlN molar fraction and high quality AlGaN grown on periodically formed AlN nanopillars

Termin

Datum: 10.10.2022

Zeit: 14:45 – 15:00

Redezeit: 12 Min.

Diskussionszeit: 3 Min.

Ort / Stream:

Salon Moskau

Session

AlGaN Relaxation and Applications

Themen

Growth
Optical devices

Mitwirkende

Ryota Hasegawa (Meijo University / JP), Tomoya Omori (Meijo University / JP), Kazuki Yamada (Meijo University / JP), Ayumu Yabutani (Meijo University / JP), Ryosuke Kondo (Meijo University / JP), Eri Matsubara (Meijo University / JP), Sho Iwayama (Meijo University / JP), Professor Motoaki Iwaya (Meijo University / JP), Professor Tetsuya Takeuchi (Meijo University / JP), Professor Satoshi Kamiyama (Meijo University / JP), Professor Hideto Miyake (Meijo University / JP; Mie University / JP)