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IWN 2022
Programm
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Session
Session – Growth
UV LEDs
Termin
Datum:
13.10.2022
Zeit:
10:30
–
12:00
Ort / Stream:
Salon Moskau
Chair
Professor Hideki Hirayama
RIKEN Cluster for Pioneering Research (CPR) / JP
Professor Leo J. Schowalter
Nagoya University / JP
Programm
10:30
–
11:00
25 Min.
5 Min.
Invited Talk
IT 59
Challenges of epitaxial growth & industrialization of efficient UV-C LEDs
Professor Marc Hoffmann (ams-Osram / DE)
11:00
–
11:15
12 Min.
3 Min.
Abstract Talk
AT 222
UVC-LEDs grown on HTA-AlN/sapphire with low dislocation densities and highSi doping for strain management
Sarina Graupeter (Technische Universität Berlin / DE)
Electronic devices, Growth
11:15
–
11:30
12 Min.
3 Min.
Abstract Talk
AT 223
Core-shell GaN/Al(Ga)N heterostructures – from quantum wells for UV-A to monolayers for UV-C
Lucie Valera (Univ. Grenoble Alpes / FR)
Growth, Optical devices
11:30
–
11:45
12 Min.
3 Min.
Abstract Talk
AT 224
Growth of high-quality 1.6μm-thick Al0.63Ga0.37N on strain-engineerable AlN for low forward voltage UVC LEDs
Professor ChiaYen Huang (National Yangming Chiaotung University / TW)
Growth, Optical devices
11:45
–
12:00
12 Min.
3 Min.
Abstract Talk
AT 225
Deep UV‑LEDs with emission around 230 nm grown on single crystal AlN substrates
Dr. Marcel Schilling (Institute of solid state physics / TU Berlin / DE)
Electronic devices, Growth
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