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Dr. Sylvia Hagedorn

Ferdinand-Braun-Institut gGmbH / DE

Ferdinand-Braun-Institut gGmbH

Vorsitz

14.10.2022
10:30 – 11:30
Session
GaN Homoepitaxial Applications
Salon Moskau

Invited Speaker

11.10.2022
08:30 – 09:00 25 Min. 5 Min.
Invited Talk
IT 16
Growth on high temperature annealed AlN/sapphire templates – challenges and opportunities

Weitere Beteiligungen

11.10.2022
09:30 – 09:45 12 Min. 3 Min.
Abstract Talk
AT 121
Formation and role of voids in the recovery of sputtered AlN during high temperature annealing
Characterization, Growth
12.10.2022
09:15 – 09:30 12 Min. 3 Min.
Abstract Talk
AT 120
Radiative recombination and current injection efficiencies in deep UV LEDs grown on AlN/sapphire substrates with different defect densities
Characterization, Optical devices
12.10.2022
Poster Presentation
PP 308
Silicon diffusion and n-type doping in AlN
Characterization, Growth
13.10.2022
11:00 – 11:15 12 Min. 3 Min.
Abstract Talk
AT 222
UVC-LEDs grown on HTA-AlN/sapphire with low dislocation densities and highSi doping for strain management
Electronic devices, Growth
13.10.2022
11:30 – 11:45 12 Min. 3 Min.
Abstract Talk
AT 224
Growth of high-quality 1.6μm-thick Al0.63Ga0.37N on strain-engineerable AlN for low forward voltage UVC LEDs
Growth, Optical devices
14.10.2022
09:00 – 09:15 12 Min. 3 Min.
Abstract Talk
AT 238
Influence of template and p-side design on the performance of 234 nm far ultraviolet-C light emitting diodes
Optical devices
14.10.2022
09:45 – 10:00 12 Min. 3 Min.
Abstract Talk
AT 241
Development of AlGaN-based far-ultraviolet-C LEDs and their applications
Characterization, Optical devices