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IWN 2022
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Dr. Zhan Gao
Università degli Studi di Padova / IT
Università degli Studi di Padova
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Speaker
14/10/2022
09:30
–
09:45
12 Min.
3 Min.
Abstract Talk
AT 236
Deep levels effects and on-wafer reliability of 0.15 μm InAlN/GaN and InAlGaN/GaN HEMTs with AlGaN backbarrier for RF applications
Characterization, Electronic devices
Further involvements
14/10/2022
09:00
–
09:15
12 Min.
3 Min.
Abstract Talk
AT 234
Hot-electron trapping and electric field redistribution in 0.15 um RF AlGaN/GaN HEMT with single or double layer AlGaN backbarrier
Characterization, Electronic devices
14/10/2022
09:30
–
09:45
12 Min.
3 Min.
Abstract Talk
AT 236
Deep levels effects and on-wafer reliability of 0.15 μm InAlN/GaN and InAlGaN/GaN HEMTs with AlGaN backbarrier for RF applications
Characterization, Electronic devices
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