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IWN 2022
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Ryo Tanaka
Fuji Electric Co., Ltd. / JP
Fuji Electric Co., Ltd.
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Datum
Vortrag
14.10.2022
09:45
–
10:00
12 Min.
3 Min.
Abstract Talk
AT 237
Successful p-type activation of Mg-implanted GaN combined with sequential N implantation and atmospheric pressure anneal with AlN cap
Characterization, Electronic devices
Weitere Beteiligungen
11.10.2022
09:30
–
09:45
12 Min.
3 Min.
Abstract Talk
AT 049
Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg
Characterization, Electronic devices
14.10.2022
09:45
–
10:00
12 Min.
3 Min.
Abstract Talk
AT 237
Successful p-type activation of Mg-implanted GaN combined with sequential N implantation and atmospheric pressure anneal with AlN cap
Characterization, Electronic devices
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