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Abstract Talk
AT 049

Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg

Termin

Datum: 11.10.2022

Zeit: 09:30 – 09:45

Redezeit: 12 Min.

Diskussionszeit: 3 Min.

Ort / Stream:

Salon Rome

Session

Ion implantation and annealing

Themen

Characterization
Electronic devices

Mitwirkende

Dr. Kohei Shima (Tohoku University / JP), Ryo Tanaka (Fuji Electric Co., Ltd. / JP), Shinya Takashima (Fuji Electric Co., Ltd. / JP), Katsunori Ueno (Fuji Electric Co., Ltd. / JP), Masaharu Edo (Fuji Electric Co., Ltd. / JP), Kazunobu Kojima (Tohoku University / JP), Professor Akira Uedono (University of Tsukuba / JP), Shoji Ishibashi (National Institute of Advanced Industrial Science and Technology / JP), Professor Shigefusa F. Chichibu (Tohoku University / JP)