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  • Abstract Talk
  • PP 034

Threshold voltage instability under positive bias stress in vertical GaN trench MOSFETs

Appointment

Date:
Time:
Talk time:
Discussion time:
Location / Stream:
Salon Rome

Session

Surface and interface states

Topics

  • Characterization
  • Electronic devices

Authors

Mitsuki Inagaki (Nagoya University / JP), Tohru Oka (Nagoya University / JP; Toyoda Gosei / JP), Nariaki Tanaka (Toyoda Gosei / JP), Kazuya Hasegawa (Toyoda Gosei / JP), Takatomi Izumi (Toyoda Gosei / JP), Professor Jun Suda (Nagoya University / JP)

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