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Abstract Talk
PP 034

Threshold voltage instability under positive bias stress in vertical GaN trench MOSFETs

Appointment

Date: 12/10/2022

Time: 14:45 – 15:00

Talk time: 12 Min.

Discussion time: 3 Min.

Location / Stream:

Session

Surface and interface states

Topics

Characterization
Electronic devices

Authors

Mitsuki Inagaki (Nagoya University / JP), Tohru Oka (Nagoya University / JP; Toyoda Gosei / JP), Nariaki Tanaka (Toyoda Gosei / JP), Kazuya Hasegawa (Toyoda Gosei / JP), Takatomi Izumi (Toyoda Gosei / JP), Professor Jun Suda (Nagoya University / JP)