Back
  • Poster Presentation
  • PP 033

Depth profiling of a donor-like defect induced by ultra-low-dose Si-ion implantation and subsequent annealing in homoepitaxial n-type GaN

Appointment

Date:
Time:
Talk time:
Discussion time:
Location / Stream:
Topic Electronic devices

Session

Electronic devices

Topics

  • Characterization
  • Electronic devices

Authors

Hiroko Iguchi (Nagoya University / JP), Prof. Dr. Masahiro Horita (Nagoya University / JP), Professor Jun Suda (Nagoya University / JP)

  • © Conventus Congressmanagement & Marketing GmbH