Poster Session 1
Electronic devices

Programme

• • Poster Presentation
  • PP 026

  Impact of photoelectrochemical etching on Al₂O₃/p-GaN interface

  • Dr. Masamichi Akazawa (Hokkaido University / JP)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 027

  Temperature dependence of transport properties in AlGaN channel heterostructures

  • Julien Bassaler (Institut Néel - CNRS / FR)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 028

  Suppression of reverse leakage in enhancement-mode GaN HEMT by extended PGaN technology

  • Xinyue Dai (Chinese Academy of Sciences / CN)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 029

  Analysis of ohmic contact formation to high aluminium content Al_xSc_1‑xN heterostructures

  • Peter Fischer (TU Bergakademie Freiberg / DE)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 030

  Extraction and optimization of a complete set of compact model DC parameters of GaN HEMT

  • Pratik Ganguly (Indian Institute of Technology Madras / IN)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 031

  Comparison of heavily-doped GaN regrowth methods for non-alloyed low ohmic contact resistance with N-polar GaN HEMT

  • Dr. Takahide Hirasaki (Sumitomo Electric Industries / JP)

   Electronic devices, Growth
• • Poster Presentation
  • PP 032

  MOCVD-Grown highly Si-doped InAs and GaAs on arsenided GaN/Al₂O₃ templates

  • Dr. Takuya Hoshi (NTT Corporation / JP)

   Electronic devices, Growth
• • Poster Presentation
  • PP 033

  Depth profiling of a donor-like defect induced by ultra-low-dose Si-ion implantation and subsequent annealing in homoepitaxial n-type GaN

  • Hiroko Iguchi (Nagoya University / JP)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 035

  Evaluation of hole trap density at SiO₂/GaN MOS interfaces through capacitance-voltage measurements under ultraviolet light illumination

  • Takuma Kobayashi (Osaka University / JP)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 036

  Breakdown characteristics study of AlGaN/AlN/GaN nano-HEMT on β-Ga₂O₃ substrate

  • Professor Trupti Ranjan Lenka (National Institute of Technology Silchar / IN)

   Electronic devices, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 037

  Airy function based current model for N-polar GaN MIS-HEMTs

  • Anuja menokey (IIT Palakkad / IN)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 038

  Vertical GaN p-n junction diodes fabricated on heavily Ge-doped GaN substrates

  • Professor Tomoyoshi Mishima (Hosei University / JP)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 039

  Channeled ion implantation of Mg into GaN and development of the simulation program

  • Professor Tomoaki Nishimura (Hosei University / JP)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 040

  Investigation of GaN-based double-channel p-heterostructure field-effect transistors with AlGaN buffer layer

  • Dr. Xuerui Niu (Xidian University / CN)

   Electronic devices, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 041

  Electrical properties of the h-BN/GaN Schottky diode

  • Katarzyna Opołczyńska (Sieć Badawcza Łukasiewicz - PORT Polski Ośrodek Rozwoju Technologii / PL)

   Electronic devices, Optical devices
• • Poster Presentation
  • PP 042

  Dynamic current collapse in lateral GaN Schottky diodes

  • Dr. Shahed Reza (Sandia National Laboratories / US)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 043

  Evaluation and modelling of high-temperature annealed AlN as material platform for vertical electronics

  • Klaas Strempel (Technische Universität Braunschweig / DE)

   Electronic devices, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 044

  Study of in-situ Silicon nitridation in AlInN/Si(100) heterojunctions deposited by reactive sputtering

  • Michael Sun (University of Alcala / ES)

   Electronic devices, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 045

  Fabrication and characterization of HEMT by using sputtering buffer layer on Si substrate

  • Dr. Yoshihiro Ueoka (Tosoh Corporation / JP)

   Electronic devices, Growth
• • Poster Presentation
  • PP 046

  Comparative study of quarter-micron AlGaN/GaN HEMTs grown on QST-engineered, SiC and Si substrates

  • Dr. Patrick Waltereit (Fraunhofer IAF / DE)

   Electronic devices, Growth
• • Poster Presentation
  • PP 047

  A unified compact model development for gate lag in AlGaN/GaN HEMTs

  • Smriti Singh (IIT Roorkee / IN)
  • Dr. Biplab Sarkar (IIT Roorkee / IN)

   Characterization, Electronic devices