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Poster Session
Poster Session 1
Electronic devices
Appointment
Date:
10/10/2022
Time:
17:30
–
19:30
Location / Stream:
Topic Electronic devices
Programme
Poster Presentation
PP 026
Impact of photoelectrochemical etching on Al
2
O
3
/p-GaN interface
Dr. Masamichi Akazawa (Hokkaido University / JP)
Characterization, Electronic devices
Poster Presentation
PP 027
Temperature dependence of transport properties in AlGaN channel heterostructures
Julien Bassaler (Institut Néel - CNRS / FR)
Characterization, Electronic devices
Poster Presentation
PP 028
Suppression of reverse leakage in enhancement-mode GaN HEMT by extended PGaN technology
Xinyue Dai (Chinese Academy of Sciences / CN)
Characterization, Electronic devices
Poster Presentation
PP 029
Analysis of ohmic contact formation to high aluminium content Al
x
Sc
1‑x
N heterostructures
Peter Fischer (TU Bergakademie Freiberg / DE)
Characterization, Electronic devices
Poster Presentation
PP 030
Extraction and optimization of a complete set of compact model DC parameters of GaN HEMT
Pratik Ganguly (Indian Institute of Technology Madras / IN)
Characterization, Electronic devices
Poster Presentation
PP 031
Comparison of heavily-doped GaN regrowth methods for non-alloyed low ohmic contact resistance with N-polar GaN HEMT
Dr. Takahide Hirasaki (Sumitomo Electric Industries / JP)
Electronic devices, Growth
Poster Presentation
PP 032
MOCVD-Grown highly Si-doped InAs and GaAs on arsenided GaN/Al
2
O
3
templates
Dr. Takuya Hoshi (NTT Corporation / JP)
Electronic devices, Growth
Poster Presentation
PP 033
Depth profiling of a donor-like defect induced by ultra-low-dose Si-ion implantation and subsequent annealing in homoepitaxial n-type GaN
Hiroko Iguchi (Nagoya University / JP)
Characterization, Electronic devices
Poster Presentation
PP 035
Evaluation of hole trap density at SiO
2
/GaN MOS interfaces through capacitance-voltage measurements under ultraviolet light illumination
Takuma Kobayashi (Osaka University / JP)
Characterization, Electronic devices
Poster Presentation
PP 036
Breakdown characteristics study of AlGaN/AlN/GaN nano-HEMT on
β
-Ga
2
O
3
substrate
Professor Trupti Ranjan Lenka (National Institute of Technology Silchar / IN)
Electronic devices, Novel Materials and Nanostructures
Poster Presentation
PP 037
Airy function based current model for N-polar GaN MIS-HEMTs
Anuja menokey (IIT Palakkad / IN)
Characterization, Electronic devices
Poster Presentation
PP 038
Vertical GaN p-n junction diodes fabricated on heavily Ge-doped GaN substrates
Professor Tomoyoshi Mishima (Hosei University / JP)
Characterization, Electronic devices
Poster Presentation
PP 039
Channeled ion implantation of Mg into GaN and development of the simulation program
Professor Tomoaki Nishimura (Hosei University / JP)
Characterization, Electronic devices
Poster Presentation
PP 040
Investigation of GaN-based double-channel p-heterostructure field-effect transistors with AlGaN buffer layer
Dr. Xuerui Niu (Xidian University / CN)
Electronic devices, Novel Materials and Nanostructures
Poster Presentation
PP 041
Electrical properties of the h-BN/GaN Schottky diode
Katarzyna Opołczyńska (Sieć Badawcza Łukasiewicz - PORT Polski Ośrodek Rozwoju Technologii / PL)
Electronic devices, Optical devices
Poster Presentation
PP 042
Dynamic current collapse in lateral GaN Schottky diodes
Dr. Shahed Reza (Sandia National Laboratories / US)
Characterization, Electronic devices
Poster Presentation
PP 043
Evaluation and modelling of high-temperature annealed AlN as material platform for vertical electronics
Klaas Strempel (Technische Universität Braunschweig / DE)
Electronic devices, Novel Materials and Nanostructures
Poster Presentation
PP 044
Study of in-situ Silicon nitridation in AlInN/Si(100) heterojunctions deposited by reactive sputtering
Michael Sun (University of Alcala / ES)
Electronic devices, Novel Materials and Nanostructures
Poster Presentation
PP 045
Fabrication and characterization of HEMT by using sputtering buffer layer on Si substrate
Dr. Yoshihiro Ueoka (Tosoh Corporation / JP)
Electronic devices, Growth
Poster Presentation
PP 046
Comparative study of quarter-micron AlGaN/GaN HEMTs grown on QST-engineered, SiC and Si substrates
Dr. Patrick Waltereit (Fraunhofer IAF / DE)
Electronic devices, Growth
Poster Presentation
PP 047
A unified compact model development for gate lag in AlGaN/GaN HEMTs
Smriti Singh (IIT Roorkee / IN)
Dr. Biplab Sarkar (IIT Roorkee / IN)
Characterization, Electronic devices
v1.21.0
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