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Dr. Yoshihiro Ueoka

Tosoh Corporation / JP

Tosoh Corporation

Speaker

10/10/2022
Poster Presentation
PP 045
Fabrication and characterization of HEMT by using sputtering buffer layer on Si substrate
Electronic devices, Growth

Further involvements

10/10/2022
Poster Presentation
PP 045
Fabrication and characterization of HEMT by using sputtering buffer layer on Si substrate
Electronic devices, Growth
11/10/2022
Poster Presentation
PP 167
Internal stress and polarity control of GaN film by low impurity GaN target
Characterization, Growth