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Poster Presentation
PP 045

Fabrication and characterization of HEMT by using sputtering buffer layer on Si substrate

Appointment

Date: 10/10/2022

Time: 17:30 – 17:30

Talk time: 0 Min.

Discussion time: 0 Min.

Location / Stream:

Topic Electronic devices

Session

Electronic devices

Topics

Electronic devices
Growth

Authors

Dr. Yoshihiro Ueoka (Tosoh Corporation / JP), Yuya Suemoto (Tosoh Corporation / JP), Masami Mesuda (Tosoh Corporation / JP), Maki Kiuchi (National Institute of Advanced Industrial Science and Technology / JP), Mitsuaki Shimizu (National Institute of Advanced Industrial Science and Technology / JP)